Jordan’s research focuses on semiconductor material growth and device physics. He received his B.S. in Engineering Physics from the University of California, Berkeley in 2007 and Ph.D. in Materials from the University of California, Santa Barbara in 2012. At Berkeley, he worked on the growth and characterization of Perovskite oxide thin films under Profs. Yuri Suzuki and R. Ramesh in the multifunctional oxides group. Following this, he worked briefly at SunPower Corporation in San Jose, CA – a maker of high efficiency silicon photovoltaics. He then went on to UCSB under Prof. James Speck in the Nitrides Group/Solid State Lighting and Energy Center for his graduate studies. There, he worked on growth of III-nitrides by molecular beam epitaxy and their application to vertical devices, including InGaN-based solar cells for future high-efficiency multi-junction devices. Joining Prof. Larry Lee’s group at Yale in Electrical Engineering and the YCEI in Fall 2012, Jordan is now pursuing integration of high-efficiency compound semiconductors on silicon, a low-cost and large area platform for potential new generation of reduced-cost high-efficiency photovoltaics and light emitters.